Improving HiPIMS deposition rates by hybrid RF/HiPIMS co-sputtering, and its relevance for NbSi films

High Power Impulse Magnetron Sputtering (HiPIMS) with pre-ionization was successfully used for metal deposition at very low-pressures by feeding one cathode of a conventional dual magnetron deposition system, the other one being radio frequency (RF) supplied. By adjusting the pulse length and RF power, this hybrid RF/HiPIMS co-deposition process improved the deposition rate of niobium in a-NbSi films as well as the film homogeneity on 4 in. Si substrates. Moreover, the films obtained by hybrid RF/HiPIMS showed good response for both superconducting critical temperature transition (Tc) and normal resistivity (R), which compared favorably to films obtained by Electron Beam Physical Vapor Deposition (EB PVD) and standard DC/RF MS-PVD co-sputtering deposition currently used in the micro-fabrication of cryogenic detector.