Title of article
Hydrogen-terminated diamond surfaces and interfaces
Author/Authors
Kawarada، نويسنده , , Hiroshi، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 1996
Pages
55
From page
205
To page
259
Abstract
Surfaces and interfaces of hydrogen-terminated diamonds are reviewed. The control and preparation of diamond surfaces have been greatly advanced by the recent progress in epitaxial growth, which is discussed in Section 2. In Section 3, the hydrogen-terminated surfaces of (1 1 1) and (0 0 1) are explained in terms of types of hydrides, surface reconstructions, stability of surface CH bonds, and surface p-type conduction. In Section 4, metal/diamond contacts are reviewed. Schottky and ohmic properties are discussed on the basis of hydrogen termination, surface treatment, metal electronegativity, interfacial reaction, and surface states. The first application of hydrogen-terminated surfaces as electron devices is presented for the metal-semiconductor field effect transistor.
Journal title
Surface Science Reports
Serial Year
1996
Journal title
Surface Science Reports
Record number
1893678
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