Title of article
Crystalline/amorphous Raman markers of hole-transport material NPD in organic light-emitting diodes
Author/Authors
Sugiyama، نويسنده , , Takuro and Furukawa، نويسنده , , Yukio and Fujimura، نويسنده , , Hidetoshi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
4
From page
330
To page
333
Abstract
Raman marker bands characteristic of solid-state structure have been found for N,N′-di-1-naphthaleyl-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPD), which is used as a hole-transport material in organic light-emitting diodes. The widths of the marker bands observed for an amorphous state at 1607, 1290, and 1192 cm−1 are broader than those for the crystalline state observed at 1609, 1288, and 1198 cm−1. These Raman bands are found to be useful for detecting the crystallization, which may cause degradation of organic light emitting diodes, of amorphous NPD films.
Journal title
Chemical Physics Letters
Serial Year
2005
Journal title
Chemical Physics Letters
Record number
1914992
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