Title of article
The grain-boundary-related optical and electrical properties in polycrystalline p-type ZnO films
Author/Authors
Zhang، نويسنده , , C.Y. and Li، نويسنده , , X.M. and Gao، نويسنده , , X.D. and Zhao، نويسنده , , J.L. and Wan، نويسنده , , K.S. and Bian، نويسنده , , J.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
5
From page
448
To page
452
Abstract
Cathodoluminescence spectra and electrical properties of the N doped and N–Al codoped p-type ZnO films and the dependence of these two properties on the post-annealing were investigated. Spectral analyses show that the intensity of the green emission strongly depends on the annealing ambient and closely relates with the width of the electron depletion region at the particle boundary. The conducting type and electrical properties of N doped and N–Al codoped ZnO films are greatly affected by the annealing process. The grain boundary effect was proposed to explain the green emission behavior and the p-type conduction in polycrystalline ZnO based films.
Journal title
Chemical Physics Letters
Serial Year
2006
Journal title
Chemical Physics Letters
Record number
1917858
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