Theoretical study on the low-lying electronic states of InN

Multi-reference configuration interaction calculations (MRDCI) have been carried out on low-lying electronic states of the InN molecule. Potential energy curves and dipole transition moments have been calculated. The potential energy curves are similar to those of the corresponding states in the AlN and GaN molecules calculated previously by other authors. The lowest two electronic states of InN lie very close in energy, as reported for AlN and GaN and the calculated radiative lifetimes of the excited electronic states of InN are similar to those previously reported for the corresponding states in GaN.