Title of article
Field emission properties of boron and nitrogen doped carbon nanotubes
Author/Authors
Sharma، نويسنده , , R.B. and Late، نويسنده , , D.J. and Joag، نويسنده , , D.S. and Govindaraj، نويسنده , , A. and Rao، نويسنده , , C.N.R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
7
From page
102
To page
108
Abstract
Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of 1 μA, the current density (J) was 4 A/cm2 at 368 V/μm for B-doped CNTs and at 320 V/μm for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm2 at 290 V/μm for undoped CNTs. FE currents upto 400 μA drawn from both B- and N-doped CNTs are stable for more than 3 h.
Journal title
Chemical Physics Letters
Serial Year
2006
Journal title
Chemical Physics Letters
Record number
1919902
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