Title of article
Ab initio configuration interaction study of the low-lying electronic states of InF
Author/Authors
Banerjee، نويسنده , , Amartya and Pramanik، نويسنده , , Anup and Das، نويسنده , , Kalyan Kumar، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2006
Pages
6
From page
62
To page
67
Abstract
Electronic structure and spectroscopic properties of the low-lying electronic states of InF have been determined from the relativistic configuration interaction calculations. Potential energy curves of 18 Λ–S states have been constructed. spectroscopic constants (re, Te, ωe) of 10 states are estimated and compared with the experimental and other theoretical values. The effects of d10(In)-electron correlation on the spectroscopic constants of the ground and a few low-lying Λ–S states of InF have been explored. The spin–orbit coupling has also been included in the calculation. The radiative lifetimes for three important transitions such as A 3 Π 0 + – X 1 Σ 0 + + , B 3 Π 1 – X 1 Σ 0 + + , and C 1 Π 1 – X 1 Σ 0 + + are computed. The C–X transition is predicted to be the strongest of all. The lifetime of the C1Π1 state is about 2.3 ns at the lowest vibrational level. The computed electric dipole moments of X 1 Σ 0 + + , A 3 Π 0 + , B3Π1, and C1Π1 states of InF are also reported.
Journal title
Chemical Physics Letters
Serial Year
2006
Journal title
Chemical Physics Letters
Record number
1920115
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