Title of article
Relative stability of multiple bonds between silicon and bismuth. A theoretical study
Author/Authors
Ma، نويسنده , , Jia-Ying and Su، نويسنده , , Ming-Der، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
5
From page
190
To page
194
Abstract
Substituent effects on the potential energy surface of XSiBi (X = H, Li, Na, BeH, MgH, BH2, AlH2, CH3, SiH3, NH2, PH2, OH, SH, F, and Cl) were investigated by using B3LYP/Def2-TZVP, B3PW91/Def2-TZVPP, and CCSD(T) methods. The isomers include structures with formal double (SiBiX) and triple (XSiBi) bonds to silicon–bismuth, so a direct comparison of these types of species is possible. Our model calculations indicate that electropositively substituted SiBiX species are thermodynamically and kinetically more stable than their isomeric XSiBi molecules. Moreover, the theoretical findings suggest that F, OH, NH2, and CH3 substitution prefer to shift the double bond (SiBiX) by forming a triple bond (XSiBi).
Journal title
Chemical Physics Letters
Serial Year
2011
Journal title
Chemical Physics Letters
Record number
1931807
Link To Document