Title of article
Impact of vacuum anneal at low temperature on Al2O3/In-based III–V interfaces
Author/Authors
Martinez، نويسنده , , E. and Grampeix، نويسنده , , H. and Desplats، نويسنده , , O. and Herrera-Gomez، نويسنده , , A. and Ceballos-Sanchez، نويسنده , , O. and Guerrero، نويسنده , , J. and Yckache، نويسنده , , K. and Martin، نويسنده , , F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
139
To page
143
Abstract
We report on the effect of vacuum anneal on interfacial oxides formed between Al2O3 and III–V semiconductors. On InGaAs, no interfacial oxide is detected after annealing at 600 °C under UHV whereas annealing under secondary vacuum favours the regrowth of thin InGaOx interfacial oxide. Lowering the temperature at 400 °C highlights the effect of III–V substrates since In–OH bonds are only formed on InAs by OH release from TMA/H2O deposited alumina. On InGaAs, regrowth of InGaOx is observed, as a result of preferential oxidation of Ga. On InP, a transition from InPOx to POx is highlighted.
Journal title
Chemical Physics Letters
Serial Year
2012
Journal title
Chemical Physics Letters
Record number
1933305
Link To Document