Title of article
The p-type doping in SWCNT transparent conductive films by spontaneous reduction potential using Ag and Ni
Author/Authors
Oh، نويسنده , , Hyun Seok and Shin، نويسنده , , Kwonwoo and Lee، نويسنده , , Su Jeong and Shim، نويسنده , , Daeseob and Han، نويسنده , , Jong Hun and Myoung، نويسنده , , Jae-Min، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
29
To page
33
Abstract
The effect of p-type doping by spontaneous reduction using Ag and Ni on electrical properties of single-walled carbon nanotube (SWCNT) transparent conductive films was investigated. The Ag- and Ni-doped SWCNT films have a transmittance of 86.9–88.4% at 550 nm and a sheet resistance of 226–513 Ω/sq in a range of the concentration from 10 to 200 mM. Using Raman and UV–vis–NIR spectroscopy, it was observed that the electrical structure of SWCNTs is changed by p-type doping. So, Ag and Ni could be used as effective p-type dopants to improve electrical properties of SWCNT films.
Journal title
Chemical Physics Letters
Serial Year
2012
Journal title
Chemical Physics Letters
Record number
1933720
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