Title of article
Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation
Author/Authors
Wang، نويسنده , , Bo and Wei، نويسنده , , Zhipeng and Li، نويسنده , , Mei and Liu، نويسنده , , Guojun and Zou، نويسنده , , Yonggang and Xing، نويسنده , , Guozhong and Tan، نويسنده , , Thiam Teck and Li، نويسنده , , Sean and Chu، نويسنده , , Xueying and Fang، نويسنده , , Fang and Fang، نويسنده , , Xuan and Li، نويسنده , , Jinhua and Wang، نويسنده , , Xiaohua and Ma، نويسنده , , Xiaohui، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
182
To page
187
Abstract
We report a systematic study on modulating optical properties in gallium antimonide (GaSb) with the sulfur surface passivation. Compared with the pristine sample, the intensity of the photoluminescence (PL) emission from the passivated GaSb was dramatically enhanced about 15 times at room temperature. The temperature-dependent surface states were further investigated via the low temperature PL spectroscopy. The bound-edge-related transition emission (BE4) at 795 meV and the residual acceptor associated emission located at 777 meV were identified clearly at 10 K. The observed passivation effects on the photoluminescence characteristics evolution of GaSb are discussed in detail.
Journal title
Chemical Physics Letters
Serial Year
2013
Journal title
Chemical Physics Letters
Record number
1934238
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