Title of article
Resistive switching in single vertically-aligned ZnO nanowire grown directly on Cu substrate
Author/Authors
Dugaiczyk، نويسنده , , Lars and Ngo-Duc، نويسنده , , Tam-Triet and Gacusan، نويسنده , , Jovi and Singh، نويسنده , , Karandeep and Yang، نويسنده , , Jonathan and Santhanam، نويسنده , , Sarnath and Han، نويسنده , , Jin-Woo and Koehne، نويسنده , , Jessica E. and Kobayashi، نويسنده , , Nobuhiko P. and Meyyappan، نويسنده , , M. and Oye، نويسنده , , Michael M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
3
From page
112
To page
114
Abstract
We report unipolar resistive switching measurements from single vertical ZnO nanowires grown directly on a copper substrate. Electrical measurements using a conductive atomic force microscope show conductive filament formation at 30 kV/cm, which is an order of magnitude lower field than that for bulk films and suggest a preferential filament formation likely on the surface of the nanowires. A high resistive ratio of three orders of magnitude was observed between the high and low resistive memory states.
Journal title
Chemical Physics Letters
Serial Year
2013
Journal title
Chemical Physics Letters
Record number
1935044
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