• Title of article

    Effects of N-doping concentration on graphene structures and properties

  • Author/Authors

    Yin، نويسنده , , Wei and Jia، نويسنده , , Tian-Tian and Guo، نويسنده , , Xin and Huang، نويسنده , , Xin and Zhang، نويسنده , , Yongfan and Chen، نويسنده , , Wen-Kai، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2013
  • Pages
    6
  • From page
    74
  • To page
    79
  • Abstract
    By means of density functional theory, N-doping concentration effects on graphene and alone Pt atom adsorption on N-doping graphene with various N-doping concentrations have been investigated. We found that N dopant atoms tended to be distributed in para positions and alone Pt atom was always adsorbed in the upside of C–C bridge site around the N dopant atoms. Furthermore, we inferred that N-doped graphene with dosage concentration higher than 8/32 would be hard to be prepared. In addition, the enhancement of Pt 6s and C 2p orbital bonding interaction improved the ability of Pt atom adsorption on N-doped graphene.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2013
  • Journal title
    Chemical Physics Letters
  • Record number

    1935316