• Title of article

    Ab initio chemical kinetics for the HCCO + OH reaction

  • Author/Authors

    Mai، نويسنده , , Tam V.-T. and Raghunath، نويسنده , , P. and Le، نويسنده , , Xuan T. and Huynh، نويسنده , , Lam K. and Nam، نويسنده , , Pham-Cam and Lin، نويسنده , , M.C.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2014
  • Pages
    7
  • From page
    175
  • To page
    181
  • Abstract
    The mechanism for the reaction of HCCO and OH has been investigated at different high-levels of theory. The reaction was found to occur on singlet and triplet potential energy surfaces with multiple accessible paths. Rate constants predicted by variational RRKM/ME calculations show that the reaction on both surfaces occurs primarily by barrierless OH attack at both C atoms producing excited intermediates which fragment to produce predominantly CO and 1,3HCOH with kS = 3.12 × 10−8 T−0.59exp[−73.0/T] and kT = 6.29 × 10−11 T0.13exp[108/T] cm3 molecule−1 s−1 at T = 300–2000 K, independent of pressure at P < 76 000 Torr.
  • Journal title
    Chemical Physics Letters
  • Serial Year
    2014
  • Journal title
    Chemical Physics Letters
  • Record number

    1936112