Growth optimisation of high quality graphene from ethene at low temperatures

Large-area, high-quality graphene was grown via thermal chemical vapour deposition from ethene on Cu substrates at 850 °C. The quality of the graphene was assessed using Raman spectroscopy, SEM and electrical characterisation. The Raman spectroscopy yielded excellent results with an average 2D/G ratio of ∼2.75 and 2D FWHM of ∼35 cm−1 in the flake centres, indicative of single layer growth. Graphene field effect transistors were fabricated from in situ grown graphene lines, displaying mobilities of 1100 cm2 V−1 s−1 and 700 cm2 V−1 s−1 at room temperature for holes and electrons, respectively, underlining the high quality of the graphene.