Superior resistive switching behaviors of FeWO4 single-crystalline nanowires array

The resistive switching behaviors of metal–oxide–metal nanoscale devices are a fascinating phenomenon for next generation nonvolatile memories. Herein for the first time we demonstrate nanoscale memristive devices made from a FeWO4 nanowires array. The device shows superior bipolar resistive switching behaviors. This study is useful for exploring the multifunctional materials and their applications in nonvolatile multistate memory devices.