Gold catalytic Growth of Germanium Nanowires by chemical vapour deposition method

در اين مقاله نانوسيم هاي ژرمانيوم (GeNWs) بوسيله ي روش رسوب دهي شيميايي از فاز بخار (CVD) بر اساس مكانيسم بخار-مايع-جامد (VLS) در حضور نانوذرات طلا به عنوان كاتاليزور و ژرمانيوم تتراكلريد (GeCl4) به عنوان پيش ماده سنتز شد. GeNWs در دماي ?C400 سنتز شدند كه براي ساخت دستگاه هاي الكتريكي دماي پايين محسوب مي شود. تاثير پارامترهاي مختلف از قبيل اندازه ي نانوذرات طلا، شار گاز حامل (Ar) و مخلوط گاز H2 و گاز حامل بر روي قطر و شكل نانوسيم هاي ژرمانيوم با استفاده از ميكروسكوپ الكتروني روبشي (SEM) مورد بررسي قرار گرفت. با استفاده از آناليز تفكيك انرژي (EDS)، تركيب شيميايي نمونه مورد مطالعه قرار گرفت.

Germanium nanowires (GeNWs) were synthesized using chemical vapor deposition (CVD) based on vapor–liquid–solid (VLS) mechanism with Au nanoparticles as catalyst and germanium tetrachloride (GeCl4) as a precursor of germanium. Au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in Au colloidal solution, which resulted in Au nanoparticles with different sizes. GeNWs were synthesized at 400 °C, which is a low temperature for electrical device fabrication. Effect of different parameters such as Au nanoparticles size, carrier gas (Ar) flow and mixture of H2 with the carrier gas on GeNWs diameter and shape was studied by SEM images. The chemical composition of the nanostructure was also examined by energy dispersive X-ray spectroscopy (EDS).