Demonstration of a silicon photomultiplier with bulk integrated quenching resistors on epitaxial silicon

In this paper we present the experimental results of a silicon photomultiplier (SiPM) with bulk integrated quenching resistors on epitaxial silicon. Compared with existing SiPM with polysilicon quenching resistors on the surface or with MRS structure, it has potential advantages of high photon detection efficiency (PDE) while retaining a large micro-cell density and the fabrication process is also simplified. The SiPM with the micro-cell density up to 104/mm2 and the PDE up to 25.6% is demonstrated. The characteristics of dark count rate, single photon detection capability, gain, optical crosstalk and PDE have been investigated and discussed.