Study of spatial resolution and efficiency of silicon strip detectors with different readout schemes

The spatial resolution and efficiency of silicon strip detectors with different readout schemes considered for the ATLAS silicon tracker have been studied. A series of simulation tools has been developed for accurate modelling of the detectors and front-end electronics. All important effects like the influence of magnetic field on the charge collection in the detectors, ballistic deficit in the electronics, distributed structure of silicon strips, electronic crosstalk via the interstrip capacitance, noise injection from adjacent channels, effect of the charge collection time on timing performance of silicon strips and radiation damages to detectors and electronics have been taken into account. pes of front-end electronics, bipolar and CMOS, and three readout schemes, analogue readout of every strip, analogue readout using capacitive charge division and binary readout, have been analysed. The spatial resolution and the efficiency have been studied for particle impact angles between − 10° and + 10°, for p-side and n-side strips separately. In the Monte Carlo analysis the Landau distribution and the electronic noise were taken into account. The effects of the electronic noise on the amplitude as well as on the time measurement were implemented in the analysis.