Title of article
An Ultra Wideband GaAs pHEMT Low Noise Amplifier for 3.3-24.5 GHz_1
Author/Authors
Houshangi، Kasra نويسنده Islamic Azad University, Fasa , , Sadughi، Sirous نويسنده Sharif University of Technology, Tehran , , Aleshams، Mahmoud نويسنده Islamic Azad University, Fasa ,
Issue Information
روزنامه با شماره پیاپی 3 سال 2012
Pages
4
From page
430
To page
433
Abstract
An Ultra-Wideband (UWB) low noise amplifier (LNA) using the GaAs pseudomorphic high electron mobility transistor (GaAs pHEMT) ED02AH technology with 0.25?m gate length is modeled and designed with the aid of Advance Design System (ADS) software. Capacitive neutralization technique is used in the output stage, and a common gate structure with T-type impedance matching structure is used for the input stage to yield a wideband matched amplifier. The simulation results show that noise (NF) figure varies between 2.8 and 3.4 dB in the frequency range 3.3 to 24.5 GHz, while the power gain, S21 is 17.5±0.5 dB. The input and output return losses (S11, S22) are better than 11.25 dB, while the amplifier is stable over the frequency range of 3.3- 24.5 GHz.
Journal title
International Journal of Electronics Communication and Computer Engineering
Serial Year
2012
Journal title
International Journal of Electronics Communication and Computer Engineering
Record number
1994146
Link To Document