Measurements of time parameters of X-ray semiconductor detectors using synchrotron radiation of the VEPP-3 storage ring

Synchrotron radiation (SR) with a well deterministic time structure from the VEPP-3 storage ring was used to measure the time parameters of silicon semiconductor X-ray detectors. The time pulse response and the pulse sensitivity of the detectors were investigated. A stroboscopic oscilloscope with further data digitizing and processing was employed to register the detector pulse signal generated by repetitive SR X-radiation bursts. it is shown that taking the time dependence of the SR bursts and the distortions of the signal registration path into account allows one to obtain the pulse time characteristic function of X-ray detectors with a time resolution of not worse than 0.5 ns. The pulse and the static sensitivities of the studied X-ray detectors were compared, and a discrepancy of about 10% was revealed. The results of independent measurements with a powerful pulse X-ray tube are in a good agreement with the ones obtained with SR.