Title of article
Charging effects in passivated silicon detectors
Author/Authors
Bracken، نويسنده , , D.S. and Kwiatkowski، نويسنده , , K. and Morley، نويسنده , , K.B. and Renshaw Foxford، نويسنده , , E. and Komisarcik، نويسنده , , K. and Rader، نويسنده , , A.J. and Viola، نويسنده , , V.E.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
3
From page
424
To page
426
Abstract
Ion-implanted passivated silicon detectors undergo a gradual, then rapid increase in leakage current when exposed to ionizing radiation in the presence of gas between 5–200 Torr. Conditions for generating this effect are discussed and a mechanism is proposed to explain this behavior. Methods for preventing this effect and for recovering detectors damaged in this way are presented.
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Serial Year
1995
Journal title
Nuclear Instruments and Methods in Physics Research Section A
Record number
1996048
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