Improved method for HgI2 crystal growth and detector fabrication

Instead of the temperature oscillation method (TOM), a modified vapor growth method was applied in this paper to grow large HgI2 crystals with fewer lattice defects by providing a relatively stable temperature field during growth. And a new processing technique of HgI2 crystals was developed for detector fabrication by merging solution string-sawing and hand-cleaving. The lattice deformations caused during cleaving were reduced greatly by eliminating passivated layers on the sawed crystal platelets before cleaving.