Effects of deep level defects in semiconductor detectors

Initiated by the application of semiconductors in the very high radiation environment of future high energy accelerators a formalism has been developed which, based on first principles, allows a quantitative prediction of macroscopic detector behaviour from microscopic defect properties and concentrations. It can be applied also for a systematic study of defect properties by means of measurements of macroscopic material properties. The relation between macroscopic and microscopic properties is developed successively for thermal equilibrium conditions, the fully depleted space charge region, the stationary situation and the general time dependent case. A one dimensional numerical simulation program provides several illustrative results.