Study of trapping levels in doped HgI2 radiation detectors

The transient charge technique, TCT, was used to measure the trapping levels of pure and doped HgI2 detectors over the temperature range of 170–300 K. The dopants were excess of Hg and I2, naphthalene, butane, heavy paraffins, polyethylene and polyethylene glycol. The charge carriers were induced by α particles as well as by a UV nitrogen (337 nm) pulsed laser beam. The ICT determined trapping levels are compared with levels reported in literature from other solid state measurements.