Fabrication of an integrated ΔE-E-silicon detector by wafer bonding using cobalt disilicide

The problem concerning mechanical stability of thin self-supporting ΔE detector in a ΔE-E semiconductor detector telescope, has been solved by integrating both detectors into one unit. We show here a low-cost method to integrate the detectors by wafer bonding using cobalt disilicide. The ΔE-detector has a thickness of 6.5 μm and the E detector 290 μm with an area of 24.8 mm2. The system was characterized with secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), electrical measurement, particle measurement and two-dimensional electrical simulation.