Title of article
Charge collection efficiency in heavily irradiated silicon diodes
Author/Authors
Beattie، نويسنده , , L and Brodbeck، نويسنده , , T.J and Chilingarov، نويسنده , , A and Hughes، نويسنده , , G and Ratoff، نويسنده , , P and Sloan، نويسنده , , T، نويسنده ,
Pages
9
From page
238
To page
246
Abstract
The Charge Collection Efficiency (CCE) has been measured for minimum ionizing particles and for α-particle illuminations from both sides for planar diodes irradiated by neutrons and pions with fluences up to 3×1014 cm−2. Geometrical effects on the CCE for partially depleted detectors are deduced from the data as well as trapping effects for electrons and holes.
Keywords
Irradiated silicon detectors , Charge collection efficiency
Journal title
Astroparticle Physics
Record number
2005739
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