Title of article
Spreading resistance and C-DLTS spectra of proton-irradiated mesa diodes made on thick epitaxial Si layers
Author/Authors
E. and Nossarzewska-Orlowska، نويسنده , , E and Koz?owski، نويسنده , , R and Brzozowski، نويسنده , , A، نويسنده ,
Pages
3
From page
78
To page
80
Abstract
High-resistivity, thick silicon epitaxial layers, deposited on Czochralski silicon (CZ Si) substrate were used as a material for test diodes. Resistivity profile as a function of depth and deep-level spectra were measured by spreading resistance method and deep-level transient spectroscopy (C-DLTS) on non-irradiated and proton irradiated mesa diodes. A deep level with activation energy Ec−0.52 eV, attributed to V2O defect, dominates in the non-irradiated diodes. After irradiation two levels, Ec−0.38 and Ec−0.45 eV, related to divacancies and the level Ec−0.17 eV corresponding to VO complex are distinguished.
Keywords
Mesa diodes , Epitaxial layers , resistivity , C-DLTS , Activation energy
Journal title
Astroparticle Physics
Record number
2008756
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