High performance p–i–n CdTe and CdZnTe detectors

A breakthrough in the performance of p–i–n CdTe and CdZnTe detectors is reported. The detector stability has been significantly improved, allowing their use in precise gamma and XRF applications. Detectors with energy resolution close to Si and Ge were produced operating with only −30–−35°C cooling (by a Peltier cooler of 15×15×10 mm size and a consumed power less than 5 W). Presently detectors with volume of up to 300 mm3 are available. In terms of photoelectric effect efficiency it corresponds to HPGe detectors with volumes of about 1.5 cm3. The possibilities of further improvement of CdTe and CdZnTe detector characteristics are discussed in this paper.