The structure study of thin semiconductor and dielectric layers by synchrotron radiation diffraction

The structure of novel materials was studied using diffraction patterns obtained at the “Anomalous scattering” station. The substances to be examined are thin (100–9000 A) single-crystals, polycrystals and amorphous thin layers on various kinds of substrates that are supported by diffraction. Disorientation of blocks in highly ordered layers was estimated using the length of arc reflections in two-dimensional diffraction patterns recorded by Image Plate. A difference in parameters of crystal lattices of layers and bulk samples is shown.