The structure study of thin cadmium and copper sulphide films by diffraction of synchrotron radiation

Crystalline structure and phase composition of thin CdS, Cu2S and Cd(Cu)S films were investigated using diffraction of synchrotron radiation (SR). These films were synthesized by RPECVD using nontraditional volatile sulphur-containing precursors. The diffraction measurements were performed at the station “Anomalous Scattering”, existed at the second canal of colliding electron–positron beam accelerator VEPP-3 of Siberian center of SR (Institute of Nuclear Physics of SB RAS, Novosibirsk, Russia). It was established that these films have a high transmittance in the visible range of spectra. This type of substrate material was found to determine the structure of sulphide films. The deviation of lattice parameters of cadmium and copper sulphides in thin film state obtained on Si(1 0 0) substrates from following the parameters in bulk state probably connects with lattice mismatch of silicon substrate and hexagonal structure of growing sulphide films.