Title of article
Development of an integrated response generator for Si/CdTe semiconductor Compton cameras
Author/Authors
Odaka، نويسنده , , Hirokazu and Sugimoto، نويسنده , , Soichiro and Ishikawa، نويسنده , , Shin-nosuke and Katsuta، نويسنده , , Junichiro and Koseki، نويسنده , , Yuu and Fukuyama، نويسنده , , Taro and Saito، نويسنده , , Shinya and Sato، نويسنده , , Rie and Sato، نويسنده , , Goro and Watanabe، نويسنده , , Shin and Kokubun، نويسنده , , Motohide and Takahashi، نويسنده , , Tadayuki and Takeda، نويسنده , , Shin’ich، نويسنده ,
Pages
7
From page
303
To page
309
Abstract
We have developed an integrated response generator based on Monte Carlo simulation for Compton cameras composed of silicon (Si) and cadmium telluride (CdTe) semiconductor detectors. In order to construct an accurate detector response function, the simulation is required to include a comprehensive treatment of the semiconductor detector devices and the data processing system in addition to simulating particle tracking. Although CdTe is an excellent semiconductor material for detection of soft gamma rays, its ineffective charge transport property distorts its spectral response. We investigated the response of CdTe pad detectors in the simulation and present our initial results here. We also performed the full simulation of prototypes of Si/CdTe semiconductor Compton cameras and report on the reproducibility of detection efficiencies and angular resolutions of the cameras, both of which are essential performance parameters of astrophysical instruments.
Keywords
Gamma-ray detector , Compton camera , Monte Carlo simulation
Journal title
Astroparticle Physics
Record number
2015437
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