Title of article
Performance of 500 μm thick silicon microstrip detectors after irradiation
Author/Authors
Dutta، نويسنده , , S. and Berger، نويسنده , , G. and Borrello، نويسنده , , L. and Buffini، نويسنده , , A. and Busoni، نويسنده , , S. and Civinini، نويسنده , , C. and DʹAlessandro، نويسنده , , R. and Gregoire، نويسنده , , Gh. and DellʹOrso، نويسنده , , R. and Lenzi، نويسنده , , M. and Meschini، نويسنده , , M. and Messineo، نويسنده , , A. and Segneri، نويسنده , , G. and Starodumov، نويسنده , , A. and Tonelli، نويسنده , , G. and Verdi، نويسنده ,
Pages
5
From page
739
To page
743
Abstract
This paper investigates the performance of 500 μm thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard 300 μm sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that 500 μm thick devices are a promising technology for very large tracking systems.
Keywords
Silicon microstrip detectors , 6-inch technology , Radiation damage
Journal title
Astroparticle Physics
Record number
2018216
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