Electrical properties of SiGe microstructures fabricated by C.V.D. and F.I.B. and their applications in detectors

This work presents a study of the electrical parameters of SiGe heterostructures fabricated by low-pressure chemical vapour deposition. Results of the electrical resistance and Hall coefficient measurements of strained/Si heterostructures in the temperature range 77–300 K are reported. The study of the electrical parameter behaviour is based on the strain as well as degeneracy effects. Spreading resistance measurements of Si1−xGex microstructures fabricated by focused ion beam–liquid metal ion sources techniques are reported. A schematic diagram of an infrared detector is also included for the application of SiGe technology.