Modeling of characteristics of ionizing radiation detector based on AlGaAs–GaAs heterostructure

Calculations of parameters of an ionizing radiation detector on the basis of the transistor heterostructure n(AlGaAs)–p+(GaAs)–n−(GaAs) have been carried out. The parameters of the structure have been optimized to achieve a maximum amplification factor at a minimum density of a collector current. It has been shown that in dynamics, when the detector is connected as a phototransistor with the broken base, the implementation of intrinsic amplification of the signal from one X-ray photon is impossible. However, the irradiation with continuous X-ray flux allows to achieve high amplification in the structure with small sizes of the emitter.