Radiation hardness performance of ATLAS pixel tracker

The first ATLAS pixel assemblies with both radiation tolerant sensors and 0.25 μm electronics have been produced and irradiated with 24 GeV/c protons up to a fluence of 1.1×1015 1 MeV neq cm−2 and a dose of 60 Mrad. They have been tested in a beam and were found to fulfill all the requirements to operate at the LHC in terms of in-time efficiency and resolution. The depletion depth and charge collection efficiency to m.i.p. of n+-in-n DOFZ silicon pixel sensors have been measured for different defect annealing scenarios as well as charge trapping time constants. Results are presented here.