Radiation damage studies for the Dط silicon detector

We report on irradiation studies performed on spare production silicon detector modules for the current DØ silicon detector. The lifetime expectations due to radiation damage effects of the existing silicon detector are reviewed. A new upgrade project was started with the goal of a complete replacement of the existing silicon detector. In that context, several investigations on the radiation hardness of new prototype silicon microstrip detectors were carried out. The irradiation on different detector types was performed with 10 MeV protons up to fluences of 1014 p/cm2 at the J.R. Mcdonald Laboratory at Kansas State University. The flux calibration was carefully checked using different normalisation techniques. As a result, we observe roughly 40–50% less radiation damage in silicon for 10 MeV p exposure than it is expected by the predicted NIEL scaling.