Title of article
Extraction of electric field in heavily irradiated silicon pixel sensors
Author/Authors
Dorokhov، نويسنده , , A. and Allkofer، نويسنده , , Y. and Amsler، نويسنده , , C. and Bortoletto، نويسنده , , D. and Chiochia، نويسنده , , V. and Cremaldi، نويسنده , , L. and Cucciarelli، نويسنده , , S. and Hِrmann، نويسنده , , C. and Kim، نويسنده , , D. and Konecki، نويسنده , , M. and Kotlinski، نويسنده , , D. and Prokofiev، نويسنده , , K. and Regenfus، نويسنده , , C. and Rohe، نويسنده , , T. and Sanders، نويسنده , , D. and Son، نويسنده , , S.، نويسنده ,
Pages
6
From page
112
To page
117
Abstract
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used to simulate the charge collection and the Lorentz deflection in the pixel sensor. The simulated charge collection and the Lorentz deflection is in good agreement with the measurements both for non-irradiated and irradiated up to 10 15 n eq / cm 2 sensors.
Keywords
pixel , CMS , Radiation hardness , Electric field , Lorentz angle , Charge collection , Silicon
Journal title
Astroparticle Physics
Record number
2028488
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