Title of article
X-ray irradiation of silicon detectors
Author/Authors
Chmill، نويسنده , , V.، نويسنده ,
Pages
5
From page
722
To page
726
Abstract
Silicon pad detectors were irradiated with a 30 kVp X-ray energy spectrum and the change in capacity and dark current was measured as a function of radiation dose and restoring time. After irradiation of the detectors the parameters were monitored and the time to get back to the baseline before irradiation was measured. The relaxation process of the detector functionality (the recovery of the characteristics) was observed with bias voltage applied to the detectors.
Keywords
Silicon , X-Ray , detector , Radiation hardness , Voltage training
Journal title
Astroparticle Physics
Record number
2029642
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