• Title of article

    Radiation damage studies of multipixel Geiger-mode avalanche photodiodes

  • Author/Authors

    Musienko، نويسنده , , Y. and Renker، نويسنده , , D. and Reucroft، نويسنده , , S. and Scheuermann، نويسنده , , R. and Stoykov، نويسنده , , A. and Swain، نويسنده , , J.، نويسنده ,

  • Pages
    5
  • From page
    433
  • To page
    437
  • Abstract
    Results on the radiation hardness of multipixel Geiger-mode avalanche photodiodes (G-APDs) are presented. Recently developed G-APDs from three manufacturers (Hamamatsu (Japan), CPTA(Russia) and Mikron/Dubna(Russia)) were exposed to 28 MeV positrons with fluences up to 8 × 10 10 positrons / cm 2 at the Paul Scherrer Institute. The effects of this radiation on many G-APD parameters such as gain, photon detection efficiency, dark current and count rate for these devices are shown and discussed.
  • Keywords
    Photodiodes , Silicon radiation detectors
  • Journal title
    Astroparticle Physics
  • Record number

    2030886

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2030886