Characterization of the radiation-induced defects in Si detectors by carrier transport and decay transients

Temperature variations of the microwave probed photoconductivity (MW-PCD) transients have been shown to be a non-invasive tool for separation of recombination and trapping centers associated with radiation induced defects in Si detectors. Peaks in the asymptotic carrier decay lifetime temperature changes, attributed to carrier capture/recombination effects, are analyzed. The correlative investigations of the MW-PCD transients and kinetics of the carrier transit within detector are simultaneously performed in the proton irradiated Si pad detectors to clarify field redistribution effects. Carrier decay and transit regimes varying applied electric field are analyzed. The recombination and trapping lifetime variations with irradiation fluence are discussed.