Title of article
Electrical resistivities of Al–Pd–Os and Al–Pd–Os–Re icosahedral quasicrystals
Author/Authors
Asao، نويسنده , , Takayuki and Endo، نويسنده , , Jiro and Tamura، نويسنده , , Ryuji and Takeuchi، نويسنده , , Shin and Shibuya، نويسنده , , Tadaharu، نويسنده ,
Pages
3
From page
604
To page
606
Abstract
Electrical resistivities of structurally ordered Al–Pd–Os icosahedral quasicrystalline phase (I-phase) of various compositions were investigated. High resistivity of ρ290 K=8000 μΩ cm and a large resistivity ratio of ρ12 K/ρ290 K=2.0 has been obtained at a nominal composition Al70Pd19Os11. In addition, the effect of rhenium substitutions on the resistivity of Al–Pd–Os I-phase was studied in view of a strong scattering effect by rhenium atoms. A drastic increase in the resistivity and its temperature dependence has been observed ranging up to ρ300 K=12 000 μΩ cm and ρ12 K/ρ290 K=5.0, indicating the peculiar role of rhenium atoms on the electronic transport of I-phases.
Keywords
Icosahedral quasicrystal , Electrical resistivity , Al–Pd–Os–Re , Al–Pd–Os
Journal title
Astroparticle Physics
Record number
2057382
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