Title of article
Diffusion in Ni3Al, Ni3Ga and Ni3Ge
Author/Authors
Numakura، نويسنده , , H. and Ikeda، نويسنده , , T. and Nakajima، نويسنده , , H. and Koiwa، نويسنده , , M.، نويسنده ,
Pages
9
From page
109
To page
117
Abstract
An overview is given on recent progress in the study of atomic diffusion in three nickel-based L12-ordered intermetallic compounds, Ni3Al, Ni3Ga and Ni3Ge. Data of the diffusion of constituent species and those of chemical diffusion have been accumulated by radioactive tracer experiments and single-phase interdiffusion experiments. The tracer diffusion coefficients of the majority component, Ni, in the three compounds are of the same order of magnitude when normalized to the melting temperature, while in contrast, those of the minority component are widely different. Nevertheless, it appears possible to understand these common and distinctive features in terms of a simple model of diffusion, where both of the two species of atoms diffuse primarily over the sublattice of the majority component via the ordinary vacancy mechanism.
Keywords
chemical diffusion , Degree of order , Intermetallic compounds , Point Defects , Tracer diffusion
Journal title
Astroparticle Physics
Record number
2059096
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