Title of article
Metal-organic chemical vapor deposition growth of GaN
Author/Authors
Lu، نويسنده , , Da-chen and Wang، نويسنده , , Du and Wang، نويسنده , , Xiaohui and Liu، نويسنده , , Xianglin and Dong، نويسنده , , Jianrong and Gao، نويسنده , , Weibin and Li، نويسنده , , Chengji and Li، نويسنده , , Yunyan، نويسنده ,
Pages
3
From page
58
To page
60
Abstract
Single-crystal GaN films have been deposited on (0112) sapphire substrates using trimethylgallium (TMGa) and NH3 as sources. The morphological, crystalline, electrical and optical characterizations of GaN film are investigated. The carrier concentration of undoped GaN increases with decreasing input NH3-to-TMGa molar flow ratio.
Keywords
Gallium nitride , MOCVD , chemical vapor deposition , Epitaxy of thin films
Journal title
Astroparticle Physics
Record number
2063069
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