Title of article
Mechanisms of layer growth during molecular beam epitaxy of semiconductor films
Author/Authors
Joyce ، نويسنده , , B.A. and Shitara، نويسنده , , T. and Fahy، نويسنده , , M.R. and Sato، نويسنده , , K. and Neave، نويسنده , , J.H. and Fawcett، نويسنده , , P.N. and Kamiya، نويسنده , , I. and Zhang، نويسنده , , X.M.، نويسنده ,
Pages
11
From page
87
To page
97
Abstract
This paper reviews our present understanding of particular aspects of the surface processes involved in the growth of epitaxial semiconductor films by molecular beam epitaxy. Emphasis is placed on adatom migration and incorporation on GaAs (001) substrates during the growth of GaAs, a comparison with equivalent growth effects on (110) and (111)A oriented substrates, and the influence of mismatch and substrate orientation on growth mode and strain relaxation in the InAs/GaAs system. A brief indication of surface segregation behaviour is also included.
Keywords
surface dynamics , RHEED , Semiconductors , Molecular Beam Epitaxy
Journal title
Astroparticle Physics
Record number
2063196
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