Anomalous Hall effect in III–V-based magnetic semiconductor heterostructures

A novel III–V-based diluted magnetic semiconductor alloy (In,Mn)As shows interesting properties associated with carrier-induced magnetism. This paper describes the anomalous magnetotransport of p-(In,Mn)As-(Ga,Al)Sb heterostructures which exhibit perpendicular ferromagnetic order with hole concentrations above mid-1018 cm−3. Magnetic coupling between ferromagnetic MnAs clusters and host p-type (In,Mn)As is also discussed on the basis of magnetotransport data of inhomogeneous p-(In,Mn)As layers.