The effects of In segregation on the emission properties of InxGa1 − xAsGaAs quantum wells

In segregation modifies the quantum well (QW) potential and the emission energies in InxGa1 − xAsGaAs QW. A second effect relates to the production of In-rich islands at the upper interface which trap free excitons. The low temperature exciton recombination kinetics are compared with the GaAsAlxGa1 − xAs system. Interface localization is absent in the InxGa1 − xAsGaAs QW, confirming that segregation smooths out interface roughness. The variation in photoluminescence decay times with temperature appears to be independent in In fraction but the absolute values increase owing to a reduction in the exciton coherence area.