The influence of zirconium on the crystallization behavior and electrical properties of Cr–Si–Al resistive films

The microstructure and electrical properties of annealed Cr–Si–Al and Cr–Si–Al–Zr films were investigated. When sputtered amorphous Cr–Si–Al and Cr–Si–Al–Zr films were heated up to a temperature of 700 °C, both were found to crystallize into two phases: the nanocrystalline Cr(Al,Si)2 and Si phase. The addition of Zr into amorphous Cr–Si–Al films inhibited the nucleation and growth of the crystallization phase, resulting in the higher annealing temperatures for Cr–Si–Al–Zr films in comparison with Cr–Si–Al films to obtain a small temperature coefficient of resistance (TCR). As a result, the Cr–Si–Al–Zr films had higher electrical stability.