Title of article
Structure models of the “c-type” defect on si(001)
Author/Authors
Miyazaki، نويسنده , , Takehide and Uda، نويسنده , , Tsuyoshi and Terakura، نويسنده , , Kiyoyuki، نويسنده ,
Pages
4
From page
168
To page
171
Abstract
New structure models for an important type of defect, the “C-type” defect, on the Si(001) surface are proposed and their stability and their relation to scanning tunnelling microscopy images are studied by large-scale ab initio calculations, The crucial aspect of the new models is the presence of a vacancy in the second layer, in contrast to a naive picture assuming two vacancies on the surface.
Keywords
C-type defect , Defect formation , Silicon , Surface defects
Journal title
Astroparticle Physics
Record number
2063884
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