Title of article
Effects of doping on the electronic properties of semiconducting iron disilicide
Author/Authors
Tomm، نويسنده , , Y. and Ivaneko، نويسنده , , L. and Irmscher، نويسنده , , K. and Brehme، نويسنده , , St. and Henrion، نويسنده , , Reynée W. and Sieber-Blum، نويسنده , , I. and Lange، نويسنده , , H.، نويسنده ,
Pages
4
From page
215
To page
218
Abstract
Undoped and doped β-FeSi2 single crystals were prepared by chemical transport reaction using iodine as transporting agent. The doping elements used were Co, Mn, Cr and Ni. The effect of impurities was studied by EPR and electrical measurements. The impurities substitute Fe on its two inequivalent lattice sites. Electrical measurements indicated p-type behavior. For Cr-doped samples an activation energy of 75 meV was determined. Optical studies on (Fe1−xCox)Si2(x ⩽ 0.15) layers prepared by ion implantation into Si(100) showed a monotonous decrease of the gap.
Keywords
Semiconductors , Doping , Iron disilicide , Suicides , doping effects
Journal title
Astroparticle Physics
Record number
2063914
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